Dual shallow trench isolation (sti) field effect transistor (fet) and methods of forming

ABSTRACT

Various embodiments include field effect transistor (FET) structures and methods of forming such structures. In various embodiments, an FET structure includes: a deep n-type well; a shallow n-type well within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including: a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well, and a second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well.

FIELD

The subject matter disclosed herein relates to integrated circuitdevices. More particularly, the subject matter relates to transistorstructures in integrated circuit devices.

BACKGROUND

As integrated circuit technologies have advanced, the size of thesedevices has correspondingly decreased. In particular, as devices arereduced in scale to comply with ever-smaller packaging, tighterconstraints are applied to their dimensions and spacings.

In some particular devices, such as high-voltage field effecttransistors (HVFETs), smaller constraints can restrict the breakdownvoltage and reliability of these devices. Further, these HVFETs can beharder to reliably design and manufacture on a smaller scale.

SUMMARY

Various embodiments include field effect transistor (FET) structures andmethods of forming such structures. In various embodiments, a FETstructure includes: a deep n-type well; a shallow n-type well and ap-type well each within the deep n-type well; and a shallow trenchisolation (STI) region within the shallow n-type well, the STI regionincluding: a first section having a first depth within the shallown-type well as measured from an upper surface of the shallow n-typewell; and a second section contacting and overlying the first section,the second section having a second depth within the shallow n-type wellas measured from the upper surface of the shallow n-type well.

A first aspect includes a FET structure having: a deep n-type well; ashallow n-type well and a p-type well each within the deep n-type well;and a shallow trench isolation (STI) region within the shallow n-typewell, the STI region including: a first section having a first depthwithin the shallow n-type well as measured from an upper surface of theshallow n-type well; and a second section contacting and overlying thefirst section, the second section having a second depth within theshallow n-type well as measured from the upper surface of the shallown-type well.

A second aspect includes a method including: forming a shallow n-typewell within a deep n-type well; and forming a dual-level shallow trenchisolation (STI) within the shallow n-type well region, the dual-levelSTI including: a first section having a first depth within the n-typewell as measured from an upper surface of the shallow n-type well; and asecond section contacting and overlying the first section, the secondsection having a second depth within the shallow n-type well as measuredfrom the upper surface of the shallow n-type well.

A third aspect includes a method including: forming a first trench in adoped substrate; forming a pad oxide over a bottom of the first trench,sidewalls of the first trench, and an upper surface of the dopedsubstrate; forming a pad nitride over the pad oxide; forming a mask overthe pad nitride to define a shallow trench isolation (STI) window; andetching the pad nitride, the pad oxide and the doped substrate to form asecond trench below the first trench and connected with the firsttrench, the second trench having a distinct width from a width of thefirst trench.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of this invention will be more readilyunderstood from the following detailed description of the variousaspects of the invention taken in conjunction with the accompanyingdrawings that depict various embodiments of the invention, in which:

FIG. 1 shows a schematic cross-sectional depiction of a field effecttransistor (FET) structure according to various embodiments.

FIG. 2 shows a schematic cross-sectional depiction of a FET structureaccording to various additional embodiments.

FIG. 3 shows a schematic cross-sectional depiction of a FET structureaccording to various additional embodiments.

FIG. 4 shows a schematic cross-sectional depiction of a FET structureaccording to various additional embodiments.

FIG. 5 shows a schematic cross-sectional depiction of a FET structureaccording to various additional embodiments.

FIG. 6 shows a schematic three-dimensional perspective depiction of aFET structure according to various additional embodiments.

FIGS. 7A-7D show schematic depictions of precursor structures undergoingprocesses according to various embodiments.

It is noted that the drawings of the invention are not necessarily toscale. The drawings are intended to depict only typical aspects of theinvention, and therefore should not be considered as limiting the scopeof the invention. In the drawings, like numbering represents likeelements between the drawings.

DETAILED DESCRIPTION

As noted, the subject matter disclosed herein relates to integratedcircuit devices. More particularly, the subject matter relates totransistor structures in integrated circuit devices.

Various particular embodiments include a FET structure having: a deepn-type well; a shallow n-type well and a p-type well each within thedeep n-type well; and a shallow trench isolation (STI) region within theshallow n-type well, the STI region including: a first section having afirst depth within the shallow n-type well as measured from an uppersurface of the shallow n-type well; and a second section contacting andoverlying the first section, the second section having a second depthwithin the shallow n-type well as measured from the upper surface of theshallow n-type well.

Various additional particular embodiments include a method including:forming a shallow n-type well within a deep n-type well; and forming adual-level shallow trench isolation (STI) within the shallow n-typewell, the dual-level STI including: a first section having a first depthwithin the shallow n-type well as measured from an upper surface of theshallow n-type well; and a second section contacting and overlying thefirst section, the second section having a second depth within theshallow n-type well as measured from the upper surface of the shallown-type well.

Various further particular embodiments include a method including:forming a first trench in a doped substrate; forming a pad oxide over abottom of the first trench, sidewalls of the first trench, and an uppersurface of the doped substrate; forming a pad nitride over the padoxide; forming a mask over the pad nitride to define a shallow trenchisolation (STI) window; and etching the pad nitride, the pad oxide andthe doped substrate to form a second trench below the first trench andconnected with the first trench, the second trench having a distinctwidth from a width of the first trench.

In the following description, reference is made to the accompanyingdrawings that form a part thereof, and in which is shown by way ofillustration specific exemplary embodiments in which the presentteachings may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice thepresent teachings and it is to be understood that other embodiments maybe utilized and that changes may be made without departing from thescope of the present teachings. The following description is, therefore,merely exemplary.

It is understood that commonly labeled elements between the figures canrepresent substantially identical components, unless otherwise noted.Redundant description of these elements is minimized herein for thepurposes of clarity.

Turning to FIG. 1, a schematic depiction of a field-effect transistor(FET) structure (e.g., a high-voltage FET, or HVFET) 2 is shownaccording to various embodiments. The FET structure 2 can include a deepn-type well 4, and a shallow n-type well 6 and a p-type well 8 eachwithin the deep n-type well 4. The shallow n-type well 6 can include ann-type doped region within the deep n-type well 4; and the p-type well 8can include a p-type doped region within the deep n-type well 4. In someembodiments, the deep n-type well 4 overlies a substrate 3, which caninclude silicon and/or other conventional substrate materials known inthe art. In various embodiments, the deep n-type well 4 has a depth ofapproximately 4-8 microns, and in particular embodiments, the deepn-type well 4 has a depth of approximately 6 microns. In variousembodiments, the shallow n-type well 6 has a depth of approximately 1-2microns, and in particular embodiments, the shallow n-type well 6 has adepth of approximately 1.5 microns.

As shown in FIG. 1, the FET structure 2 can include a shallow trenchisolation (STI) region 10 within the shallow n-type well 6. In variousparticular embodiments, the FET structure 2 includes a high-voltagecomplementary metal oxide semiconductor (HVCMOS) FET structure. As willbe described herein, the STI region 10 can include a dual-level STI thatprovides various performance benefits when compared with conventionaltransistor structures.

In any case, the STI region 10 can include a first section 12 having afirst depth (d1) within the shallow n-type well 6 as measured from anupper surface 14 of the shallow n-type well 6. The first section 12 canbe formed of a conventional STI material, e.g., silicon oxide. The STIregion 10 can also include a second section 16 contacting and overlyingthe first section 12. The second section can have a second depth (d2)within the n-type well as measured from the upper surface 14 of theshallow n-type well 6. That is, according to various embodiments, theFET structure 2 (as well as other FET structures shown and describedherein) can include an STI region (e.g., STI region 10) that has twodistinct sub-regions having distinct depths. The FET structure 2 caninclude a polysilicon gate layer 15, overlying the STI region 10 andextending from the p-type well to the n-type well.

In various embodiments, the second section 16 has a greater width (w2)than the first section 12 (w1), e.g., as shown in FIG. 1. The secondsection 16 can include a zero-level mask material, e.g., silicon oxide.In various embodiments, e.g., as shown in FIG. 1, the second section 16can extend above the shallow n-type well 6. That is, a portion of thesecond section 16 can extend above the upper surface 14 of the n-typewell 6. As shown in one example embodiment in FIG. 1, in some cases, thesecond section 16 extends laterally beyond the first section 12, e.g.,while remaining laterally within the borders of the shallow n-type well6. In the embodiment shown in FIG. 1, the second section 16 can includea substantially rounded profile proximate at least one lateral edge 17thereof. Shown in FIG. 1, in some embodiments, the second section 16 caninclude a substantially rounded profile proximate two lateral edges 17thereof.

In various other embodiments, for example, in the FET structure 22 shownin FIG. 2, a portion of a first section 23 (of an STI region 24) caninclude an upper surface 25 that is coplanar (sharing a same depth inthe FET structure 22) with an upper surface 26 of a second section 27 ofthe STI region 24. In these embodiments, the second section 27 extendslaterally beyond the first section 23 in only one direction, e.g.,toward the p-type well 8.

FIG. 3 shows a schematic depiction of a FET structure 32 according tovarious additional embodiments. The FET structure 32 includes an STIregion 34 having a first section 36 and a second section 38 overlyingthe first section 34. In these embodiments, the first section 36 and thesecond section 38 can have substantially equal widths, and can besubstantially vertically aligned. In these particular embodiments, thefirst section 36 can extend below (to a greater depth) the shallown-type well region 6, and can span between the deep n-type well 4 andthe shallow n-type well region 6. In some cases, the first section 36can include a zero-level mask material, e.g., as described with respectto FIG. 1. The second section 38 can include a conventional STImaterial, e.g., silicon oxide.

FIG. 4 shows another embodiment of a FET structure 42, where an STIregion 44 includes a first section 46 having a lesser width (w1) than awidth (w2) of a second section 48. In some cases, the first section 46can have a lateral width (w1) that is less than half the width (w2) ofthe second section 48. In various embodiments, the first section 46 cancontact the second section 48 span through the shallow n-type well 6,and contact the deep n-type well 4. That is, the first section 46 spansbetween the deep n-type well 4 and the second section 48.

FIG. 5 shows another embodiment of a FET structure 52, which includes astepped STI region 54 formed of a substantially uniform STI material,e.g., silicon oxide. That is, the STI region 54 can include a roundedprofile 56, which may be located proximate an upper surface 58 of ashallow n-type well 6. The rounded profile 56 can span between a gatedielectric material section, e.g., silicon oxide 60 above the uppersurface 58 of the shallow n-type well 6 and an STI section 62 below thesurface of the shallow n-type well 6. In the FET structure 52 of FIG. 5,a polysilicon layer 65 can be formed over the STI region 54, e.g.,forming a cap over an upper surface of the FET structure 52.

FIG. 6 shows a three-dimensional perspective view of another embodimentof a FET structure 62 according to various embodiments. As shown the FETstructure 62 can include an STI region 64 having a first section 66,which can include a zero-level mask material, e.g., silicon oxide. Asshown, the first section 66 can include distinct sections 66A, 66B, 66C,etc. separated by deep n-type well 4 within a layer of the FET structure62. Overlying the first section 66 is a blanket layer second section 68,which covers the distinct sections 66A, 66B, 66C of the first section 66as well as the deep n-type well 4. The second section 68 of the STIregion 64 can include any conventional STI material, e.g., siliconoxide.

FIGS. 7A-7D illustrate processes in forming a FET structure (e.g., FETstructures shown and described herein) according to various embodiments.

FIG. 7A shows a first process of forming a FET structure, includingforming a first trench 70 in a doped substrate 72. In some embodiments,the doped substrate 72 can include an n-type doped substrate such as ann-type doped silicon. In various embodiments, the forming of the firsttrench 70 includes etching the doped substrate 72 to a first depth.

FIG. 7B shows an additional process of forming a pad oxide 74 over abottom 76 (FIG. 7A) of the first trench 70, sidewalls 78 of the firsttrench 70, and an upper surface 80 of the doped substrate 72 (FIG. 7A).In various embodiments, the pad oxide 74 is deposited over the dopedsubstrate 72 including the first trench 70. FIG. 7B also shows anadditional process of forming a pad nitride 82 over the pad oxide 74.The pad nitride 82 can be formed to substantially cover the pad oxide74, and in some cases, can be blanket deposited over the pad oxide 74.In various embodiments, the pad nitride 82 is deposited to cover the padoxide 74 that is over the bottom of the first trench, sidewalls of thefirst trench and the upper surface of the doped substrate

FIG. 7C shows an additional process of forming a mask 84 over the padnitride 82 to define a shallow trench isolation (STI) window 86. Themask 84 can be initially deposited to substantially cover the padnitride 82, and can be exposed to remove portions of the mask to definethe STI window 86. In these cases, the mask 84 can include a photomaskmaterial.

FIG. 7D shows an additional process of etching the pad nitride 82, thepad oxide 74 and the doped substrate 72 to form a second trench 88 abovethe first trench 70 and connected with the first trench 70. The secondtrench 88 can have a distinct width (w2) from a width (w1) the firsttrench 70. As shown in FIG. 7B, in some cases, the STI window 86 canhave a substantially equal width (w2) as the second trench 88.

In various embodiments, the first trench 70 and the second trench 88collectively form a stepped surface 90. The stepped surface 90 can laterform the foundation of a stepped STI, as described herein. Further, asdescribed herein, the stepped surface 90 can be rounded, beveled orotherwise at least partially arced in order to form one or more of theSTI structures shown and described herein.

In various other embodiments, a method of forming a FET structure caninclude:

Process PA: forming a shallow n-type well within a deep n-type well; and

Process PB: forming a dual-level shallow trench isolation (STI) withinthe shallow n-type well region. In some embodiments, the dual-level STIcan include: a) a first section having a first depth within the shallown-type well as measured from an upper surface of the shallow n-typewell; and b) a second section contacting and overlying the firstsection. The second section can have a second depth within the shallown-type well as measured from the upper surface of the shallow n-typewell.

In various embodiments, the process of forming of the dual-level STIwithin the shallow n-type well region includes:

(i) etching the shallow n-type well within the deep n-type layer to forma first trench having a first width;

(ii) forming a pad oxide over the shallow n-type well including thefirst trench; and

(iii) forming a pad nitride over the pad oxide.

In some cases, the process of forming the dual-level STI furtherincludes:

(iv) forming a mask over the pad nitride; and

(v) etching the pad nitride, the pad oxide, and the shallow n-type wellwithin the deep n-type well to form a second trench above the firsttrench. As described herein, the second trench can have a second widthdistinct from the first width.

In some cases, the process of forming the pad oxide (ii) includesforming the pad oxide over a bottom of the first trench, sidewalls ofthe first trench, and an upper surface of the shallow n-type well.

In some cases, the process of forming the pad nitride (iii) includesforming the pad oxide to substantially cover the pad oxide.

As used herein, the term “depositing” may include any now known or laterdeveloped techniques appropriate for the material to be depositedincluding but are not limited to, for example: chemical vapor deposition(CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD),semi-atmosphere CVD (SACVD) and high density plasma CVD (HDPCVD), rapidthermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reactionprocessing CVD (LRPCVD), metalorganic CVD (MOCVD), sputteringdeposition, ion beam deposition, electron beam deposition, laserassisted deposition, thermal oxidation, thermal nitridation, spin-onmethods, physical vapor deposition (PVD), atomic layer deposition (ALD),chemical oxidation, molecular beam epitaxy (MBE), plating, evaporation.

When an element or layer is referred to as being “on”, “engaged to”,“connected to” or “coupled to” another element or layer, it may bedirectly on, engaged, connected or coupled to the other element orlayer, or intervening elements or layers may be present. In contrast,when an element is referred to as being “directly on,” “directly engagedto”, “directly connected to” or “directly coupled to” another element orlayer, there may be no intervening elements or layers present. Otherwords used to describe the relationship between elements should beinterpreted in a like fashion (e.g., “between” versus “directlybetween,” “adjacent” versus “directly adjacent,” etc.). As used herein,the term “and/or” includes any and all combinations of one or more ofthe associated listed items.

Spatially relative terms, such as “inner,” “outer,” “beneath”, “below”,“lower”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. Spatiallyrelative terms may be intended to encompass different orientations ofthe device in use or operation in addition to the orientation depictedin the figures. For example, if the device in the figures is turnedover, elements described as “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the example term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof. It is further understood that theterms “front” and “back” are not intended to be limiting and areintended to be interchangeable where appropriate.

This written description uses examples to disclose the invention,including the best mode, and also to enable any person skilled in theart to practice the invention, including making and using any devices orsystems and performing any incorporated methods. The patentable scope ofthe invention is defined by the claims, and may include other examplesthat occur to those skilled in the art. Such other examples are intendedto be within the scope of the claims if they have structural elementsthat do not differ from the literal language of the claims, or if theyinclude equivalent structural elements with insubstantial differencesfrom the literal languages of the claims.

The foregoing description of various aspects of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and obviously, many modifications and variations arepossible. Such modifications and variations that may be apparent to anindividual in the art are included within the scope of the invention asdefined by the accompanying claims.

We claim:
 1. A field effect transistor (FET) structure, comprising: adeep n-type well in a substrate; a shallow n-type well within the deepn-type well; a p-type well within the deep n-type well and a steppedshallow trench isolation (STI) region at least partially within theshallow n-type well, the stepped STI region including: a first lowersurface positioned within the shallow n-type well, a second lowersurface contacting and overlying the p-type well, wherein a depth of thesecond lower surface as measured from an upper surface of the steppedSTI region is less than a depth of the first lower surface as measuredfrom the upper surface of the stepped STI region, and a transitionsurface positioned between the first lower surface and the second lowersurface, wherein the transition surface contacts at least one of theshallow n-type well, the deep n-type well, and the p-type well.
 2. TheFET structure of claim 1, wherein the stepped STI region includessilicon oxide.
 3. The FET structure of claim 1, further comprising apolysilicon layer contacting and overlying the stepped STI region. 4.The FET structure of claim 1, wherein the transition surface of thestepped STI region includes a rounded surface profile.
 5. The FETstructure of claim 4, wherein the rounded surface profile of the steppedSTI region is positioned between a gate dielectric material section, thegate dielectric material being positioned above an upper surface of theshallow n-type well, and an STI section positioned below a lower surfaceof the shallow n-type well.
 6. The FET structure of claim 4, wherein therounded surface profile of the transition surface is proximal to thesecond lower surface of the stepped STI region.
 7. The FET structure ofclaim 1, wherein the second lower surface of the stepped STI region issubstantially coplanar with an upper surface of one of the deep n-typewell and the p-type well.
 8. The FET structure of claim 1, wherein thetransition surface of the stepped STI region includes a first sectionand a second section, and wherein an angular orientation of the firstsection relative to a lower surface of the shallow n-type well isdifferent from an angular orientation of the second section relative tothe lower surface of the shallow n-type well.
 9. The FET structure ofclaim 1, wherein the FET structure comprises a high-voltagecomplementary metal oxide semiconductor (HVCMOS) FET structure.
 10. Afield effect transistor (FET) structure, comprising: a deep n-type wellin a substrate; a shallow n-type well within the deep n-type well; and astepped shallow trench isolation (STI) region within the shallow n-typewell, the stepped STI region including: a plurality of first sectionswithin the shallow n-type well, each of the plurality of first sectionsbeing laterally separated from each other by a respective portion of theshallow n-type well, wherein at least one of the plurality of firstsections includes a lower surface contacting and overlying the deepn-type well, and a second section within the shallow n-type well andcontacting each of the plurality of first sections, wherein the secondsection overlies and extends laterally beyond each of the plurality offirst sections.
 11. The FET structure of claim 10, wherein the secondsection of the stepped STI region includes a zero-level mask material.12. The FET structure of claim 10, wherein a lateral width of the secondsection is greater than a combined lateral width of the plurality offirst sections.
 13. The FET structure of claim 10, wherein the secondsection of the stepped STI region includes a portion contacting andoverlying the shallow n-type well.
 14. The FET structure of claim 10,wherein the second section of the stepped STI region includes a portionextending laterally beyond each of the first sections within the shallown-type well.
 15. The FET structure of claim 10, further comprising: anelectrical contact overlying and contacting the stepped STI region; anda polysilicon gate contacting and overlying the electrical contact. 16.The FET structure of claim 15, further comprising: a p-type well withinthe deep n-type well, wherein the contact layer contacts and overlieseach of the stepped STI region, the shallow n-type well, and the p-typewell.
 17. A field effect transistor (FET) structure, comprising: a deepn-type well in a substrate; a shallow n-type well within the deep n-typewell; and a multi-layer shallow trench isolation (STI) region within theshallow n-type well and deep n-type well, the multi-layer STI regionincluding: a first section positioned within the shallow n-type well andthe deep n-type well, wherein a lower surface of the first section isburied within the deep n-type well and an upper surface of the firstsection is buried within the shallow n-type well, and a second sectioncontacting and overlying the first section, wherein the second sectioncomprises an STI material having a different composition from the firstsection, an upper surface of the first section is substantially coplanarwith an upper surface of the shallow n-type well, and wherein a depthbetween the upper and lower surfaces of the first section issubstantially equal to a depth between an upper surface of the shallown-type well and a lower surface of the second section.
 18. The FETstructure of claim 17, wherein a lateral width of the first section isapproximately equal to a lateral width of the second section, andwherein the first section is substantially vertically aligned with thesecond section.
 19. The FET structure of claim 17, wherein the firstsection includes a zero-level mask material.
 20. The FET structure ofclaim 17, further comprising: a p-type well within the deep n-type well;an electrical contact overlying and contacting the multi-layer STIregion; and a p-type well within the deep n-type well, wherein theelectrical contact overlies each of the multi-layer STI region, theshallow n-type well, and the p-type well.